AGG3336-3 – Silicon Wafer 3" (76.2mm)

These 3" (76.2mm) diameter silicon wafers can be used either as substrates for thin film research or to make small silicon substrates by dicing the wafer into smaller pieces using a scriber. Wafers generally have flats or notches cut into one or more sides indicating the crystallographic plane and doping type. These silicon wafers are available as P-type (boron-doped) wafers which are cut with a primary flat. The wafers are 230 - 575µm thick, polished on one side, and do not have a silicon dioxide top coating. Each wafer is shipped in a wafer carrier.

Properties:

Orientation: <111> for 3"
Resistance: 1-30Ω
Type P: (Boron) (1 primary flat)
No SiO2 top coating
Wafer thickness:
Ø3" = 13.6 - 18.5 mill (345 - 470µm)
Roughness: 2nm
TTV: = <20µm
Wafer is polished on one side